引用本文:金鸿,陈曦,张赟宁,邾玢鑫,黄悦华.增强型GaN器件动态导通电阻的分数阶等效建模[J].控制理论与应用,2025,42(6):1152~1159.[点击复制]
JIN Hong,CHEN Xi,ZHANG Yun-ning,ZHU Bin-xin,HUANG Yue-hua.Modeling the dynamic on-resistance of enhancement-mode GaN device by fractional-order model[J].Control Theory & Applications,2025,42(6):1152~1159.[点击复制]
增强型GaN器件动态导通电阻的分数阶等效建模
Modeling the dynamic on-resistance of enhancement-mode GaN device by fractional-order model
摘要点击 39  全文点击 3  投稿时间：2024-03-30  修订日期：2025-04-30
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DOI编号  10.7641/CTA.2025.40187
  2025,42(6):1152-1159
中文关键词  GaN器件  导通电阻  电子俘获  分数阶微积分
英文关键词  GaN device  on-resistance  electron trapping  fractional calculus
基金项目  湖北省自然科学基金项目(2020CFB248)
作者单位E-mail
金鸿 三峡大学 电气与新能源学院 2575867769@qq.com 
陈曦* 三峡大学 电气与新能源学院 eene chenxi@ctgu.edu.cn 
张赟宁 三峡大学 电气与新能源学院  
邾玢鑫 三峡大学 电气与新能源学院  
黄悦华 三峡大学 电气与新能源学院  
中文摘要
      增强型GaN器件在漏源极之间承受高电压应力时存在电子俘获效应, 对器件的动态导通电阻具有影响. 为 精确简洁地描述此现象, 提出一种改进钳位电路的测试平台对器件进行实验测量. 在此基础上, 根据器件电子俘获 效应随捕获时间而改变的“长尾分布规律”与分数阶微积分运算时间相关“记忆效应”的关联, 提出一种基于分数阶 等效阻抗的建模方法, 并利用差分进化算法辨识模型参数. 研究结果表明, 所提改进测量方案能够消除传统方案测 量过程中电压尖峰现象对测量结果的影响, 所建立的分数阶等效阻抗模型能够较为准确地表征增强型GaN器件动 态导通电阻的变化规律, 所提模型参数变化规律具有一致性, 其中分数阶阶次随器件漏源极之间偏置电压的增加而 减小, 证实所提模型能够从工作机理层面反映器件特性与参数变化规律.
英文摘要
      Enhancement-mode GaN devices exhibit electron trapping effects when subjected to high voltage stress between the drain and source electrodes, affecting the device’s dynamic on-state resistance. To accurately and concisely describe this phenomenon, a test platform with improved clamping circuit is proposed to carry out experimental measurements of the device. On the basis of which, a modeling and parameter identification method is proposed based on the fractional-order equivalent impedance model, which considers the association between the electron trapping effect in the device and the “long-tail distribution pattern” that changes with trapping time, along with the time-dependent “memory effect” related to fractional calculus operations. Research results demonstrate that the proposed improved measurement scheme can eliminate the influence of voltage spikes on measurement results encountered in traditional approaches. The proposed fractional-order equivalent impedance model can accurately characterize the variation pattern of the dynamic on-state resistance of enhanced GaN devices. The proposed model parameter variation pattern exhibits consistency, with the fractional order decreasing with an increase in bias voltage between the drain and source electrodes. This confirms that the proposed model can reflect the characteristics and parameter variation patterns of the device from a working mechanism perspective.