直拉硅单晶生长过程建模与控制研究综述

A review of growth process modeling and control of Czochralski silicon single crystal

中文关键词  直拉硅单晶  过程建模  变量检测  过程控制  控制策略

英文关键词  Czochralski silicon single crystal  process modeling  variables detection  process control  control strategy

中文摘要

      硅单晶是最重要的半导体材料, 90%的半导体器件和集成电路芯片都制作在硅单晶上. 随着集成电路技术 的快速发展, 对硅单晶的品质要求也不断提高. 直拉法是生产硅单晶的主要方法, 其科学原理与方法、生长技术与 工艺、控制策略与手段一直是理论界和产业界高度关注和不断研究的热点. 本文针对直拉法电子级硅单晶生长过 程, 以晶体生长基本原理为基础, 从生长建模、变量检测、控制方法等方面进行了全面的阐述, 特别针对当今大尺 寸、高品质硅单晶生长的要求, 总结了目前所取得的主要研究成果与面临的问题, 并提出了相应的研究思路和方法.

英文摘要

      Silicon single crystal is one of the most important materials of semiconductor. More than 90% of semiconductor devices and integrated circuit chips are made of silicon single crystal. As the rapid development of integrated circuit technique, the quality of silicon single crystal is being concerned much more than before. Czochralski method is the main method of silicon single crystal production, therefore, its scientific principle and method, growth technique and technology, as well as control strategy and method have always been a hot research topic in both academia and industry. For growth process of electronic-grade silicon single crystal by Czochralski method, based on basic principle of crystal growth, this paper fully describes growth modeling, variables detection, control method, and so on. Especially for the demand of silicon single crystal with large size and high quality nowadays, the main research achievements and current problems are summarized. The research ideas and methods are put forward correspondingly.